unisonic technologies co., ltd uf3710 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2012 unisonic technologies co., ltd qw-r203-036.e 57 a , 100v n-channel power mosfet ? description the utc uf3710 uses advanced process technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suit able for use as a load switch or in pwm applications. ? features * r ds(on) = 23m ? @v gs = 10 v * ultra low gate charge ( typical 130 nc ) * low reverse transfer capacitance ( c rss = typical 72 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 uf3710l-ta3-t UF3710G-TA3-T to-220 g d s tube uf3710l-tq2-t uf3710g-tq2-t to-263 g d s tube uf3710l-tq2-r uf3710g-tq2-r to-263 g d s tape reel note: pin assignment: g: gate d: drain s: source
uf3710 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r203-036.e ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit gate-source voltage v gss 20 v drain-source voltage v dss 100 v drain current continuous (v gs =10v) i d 57 a pulsed (note 2) i dm 230 avalanche current (note 2) i ar 57 a avalanche energy repetitive(note 2) e ar 20 mj single pulsed(note 3) e as 1060 (note 4) power dissipation p d 165 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) t j =25c, l=0.65mh, r g =25 ? , i as =57a, v gs =10v this is a typical value at device destruction and represents operation outside rated limits. ? thermal data parameter symbol ratings unit junction to ambient ja 62 /w junction to case jc 0.75 /w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 100 v drain-source leakage current i dss v ds =100v, v gs =0v 25 a gate-source leakage current i gss v gs =20v, v ds =0v 100 na breakdown voltage temperature coefficient bv dss / t j i d =1m a,referenced to 25 0.13 v/c on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250 a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =28a (note) 23 m ? forward transconductance g fs v ds =25v, i d =28 a 32 s dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f =1mhz 3130 pf output capacitance c oss 410 pf reverse transfer capacitance c rss 72 pf
uf3710 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r203-036.e ? electrical characteristics(cont.) switching parameters total gate charge q g v ds =80v, i d =28a, v gs =10v 130 nc gate source charge q gs 26 nc gate drain charge q gd 43 nc turn-on delay time t d(on) v dd =50v, i d =28a, r g =2.5 ? v gs =10v (note) 12 ns turn-on rise time t r 58 ns turn-off delay time t d(off) 45 ns turn-off fall-time t f 47 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =28a, v gs =0v (note) 1.2 v maximum continuous drain-source diode forward current i s mosfet symbol showing the integral reverse p-n junction diode. 57 a maximum pulsed drain-source diode forward current i sm 230 a body diode reverse recovery time t rr i f =28a, di/dt=100a/ s (note) 140 220 ns body diode reverse recovery charge q rr 670 1010 nc note: pulse width 400 s; duty cycle 2%.
uf3710 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r203-036.e ? test circuits and waveforms + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
uf3710 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r203-036.e ? test circuits and waveforms (cont.) switching test circuit switching waveforms 50k 0.3 f dut v ds same type as d.u.t. v gs 0.2 f 12v charge q gs q gd q g v gs 3ma v g r d r g gate charge test circui t gate charge waveform unclamped inductive switching test circuit unclamped inductive switching waveforms
uf3710 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r203-036.e ? typical characteristics drain current,i d (ua) drain source breakdown voltage,bv ds (v) 40 80 drian current vs drain source breakdown voltage 0 0 100 800 400 500 140 120 160 200 300 600 700 drain current,id(ua) gate threshold voltage. v th (v) 1 2 drian current vs gate threshold voltage 0 0 50 400 200 250 4 3 5 100 150 300 350 source to drain voltage v sd (v) 00.2 drain current. source to drain voltage 0.6 0.4 0.8 1.0 0 2 4 6 8 10 0 100 300 200 400 500 0 5 10 15 20 25 drain - source on-state resistance characteristics i d =28a v gs =10v drain to source voltage v ds (mv) utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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